RTR025N05
Electrical characteristics (Ta=25 ° C)
Data Sheet
Parameter Symbol
Min.
Typ.
Max.
Unit
Conditions
Gate-source leakage
I GSS
?
?
± 10
μ A
V GS = ± 12V, V DS =0V
Drain-source breakdown voltage V (BR)DSS
45
?
?
V
I D = 1mA, V GS =0V
?
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
I DSS
V GS (th)
R DS (on) ?
Y fs
C iss
C oss
?
0.5
?
?
?
2.0
?
?
?
?
95
100
125
?
250
60
1
1.5
130
140
175
?
?
?
μ A
V
m ?
m ?
m ?
S
pF
pF
V DS = 45V, V GS =0V
V DS = 10V, I D = 1mA
I D = 2.5A, V GS = 4.5V
I D = 2.5A, V GS = 4V
I D = 2.5A, V GS = 2.5V
V DS = 10V, I D = 2.5A
V DS = 10V
V GS = 0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
C rss
t d (on)
t r
t d (off)
t f
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
30
9
15
20
14
3.2
0.9
0.7
?
?
?
?
?
?
?
?
pF
ns
ns
ns
ns
nC
nC
nC
f=1MHz
V DD 25V
I D = 1.2A
V GS = 4.5V
R L 20.8 ?
R G =10 ?
V DD 25V
I D = 2.5A
V GS = 4.5V
R L 10 ?
R G =10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
1.2
Unit
V
Conditions
I S = 2.5A, V GS =0V
? Pulsed
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2009.06 - Rev.A
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